Neutron Transmutation Doping (NTD) is the most promising method for producing high quality silicon-based semiconductors. Since the international market for doped silicon is foreseen to substantially increase in the near future, the RRL will exploit various methods to accomplish axially and radially uniform irradiation of the ingots to improve homogeneity. A ratio as-high-as-possible between the thermal and fast neutron fluxes will be sought for limiting the defects in the silicon crystal generated by fast neutrons.

Back to Nuclear Technology main page